Posters

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Alex Demkov

Jean-Michel Hartmann

Maksym Myronov

Maksym Myronov

Andre Strittmatter

Dongyeong Kim

Pierre Tomasini

Diana Ryzhak

Ahsan Hayat

Songdan Kang

Osamu Nakatsuka

Shota Suzuki

Kentarou Sawano

Adam Arette-Hourquet

Andrea Barzaghi

Xueying Yu

Chiara Mastropasqua

Federico Cesura

Integration of electro-optic barium titanate on Si and SOI

Impact of flows, temperature and pressure on the GeSn growth kinetics with a Ge2H6 + SnCl4 chemistry

Efficient in-situ p- and n-doping of strained germanium tin epilayers

In-Situ Strain Control of Silicon Carbide for 3D MEMS Applications

Local epitaxial growth of GaAs islands for monolithic integration on Si

Untwinned Si (111) on Al2O3 (0001) Grown by Thermal Laser Epitaxy

Si CVD Fundamentals Revisited

Growth and Optical Characterization of SiGe QDs on Si Nano-tips

Deposition of Sn rich islands by Molecular Beam Epitaxy

Gallium phosphide nanowires grown on SiO2 by gas-source molecular beam epitaxy

Heteroepitaxial Growth of High Substitutional Sn-content Ge1−xSnx Layer Lattice-matched on InP Substrate

SiGe Fabrication on Si by Al induced liquid phase epitaxy using screen-printing Al-Ge paste

Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method

Van der Waals heteroepitaxy of Xene 2D Processing and characterization on graphene/6H-SiC

From Plastic to Elastic Relaxation in SiGe Microcrystals

Effects of Phosphorous Doping Density on Thin Ge Layers Grown on Si(001)

Uniform CVD of graphene on 2’’ SiC wafer

InGaN Growth by PAMBE in the Intermediate Composition Regime on Silicon

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Roger Loo

Gianluca Rengo

Heorhii Yehiazarian

Anna Fontcuberta i Morral

Sebastian Reiter

Shuyu Wen

Jon Schlipf

Fabio Pezzoli

Anna Invernici

Kentarou Sawano

Meng-Hsueh Chiang

Raffaele Giani

Ngoc Duy Nguyen

Ge/Si Vertical Separate Absorption Charge Multiplication (VSACM) Avalanche Photo Diodes (APDs): Epitaxial Growth and Impact of Post-Epi Anneal on Excess Carrier Lifetime

Influence of Ga concentration on the local atomic structure and material properties of Ga-doped Si0.36Ge0.64 epitaxial layers

Modeling of optical absorption in SiGe QCSE modulators including excitonic effects

Electrical Characterization of Sputtered Monocrystalline GeSn Thin Films for Photodetection Applications

Plasmonic TiN nanohole arrays for on-chip refractive index sensors

Extended short-wave infrared GeSn photodetector realized by ion implantation and flash lamp annealing

TiN nanotriangle arrays in a CMOS-compatible fabrication process for open plasmonic cavities

Spin pumping in GeSn alloys

Investigation of the Schottky barrier height in germanium-aluminum heterostructure devices

Diode characteristics and room temperature EL emission for strained SiGe/Ge quantum well LEDs

Modeling of Selectorless RRAM with Transient Characteristics for Computing-in-Memory Application

Impact of substrate doping on the performance of vertically illuminated Ge-on-Si photodetectors

Controllable charge distribution and dynamics of conduction electrons around metallic nanowires

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Xing Wei

Kevin Sewell

Justine Lespiaux

Gérard Daligou

Enrico Di Russo

Alicia Ruiz-Caridad

Anis Attiaoui

Tatsuro Maeda

Oliver Steuer

Takahiro Inoue

Guang-Li Luo

Sabur Ayinde

Structure and electrical property of polycrystalline silicon trap-rich layer by in-situ annealing

First Principles Calculation of Alloy Scattering Parameters and their Effect on the Mobility of GeSn

Voids detection in trenches filled with N-type doped silicon

Radiative Carrier Lifetime in GeSn Mid-Infrared Emitters

Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting

Strain Analysis of Ge Quantum Well on a SixGe1-x barrier

Polarization-Induced Fano Resonances in All-Dielectric SWIR Metasurface

The layer transfer of Ge-lattice-matched SiGeSn epitaxial films

Post growth thermal treatments of Silicon-Germanium-Tin-on-insulator alloys

Fabrication of Si/Ge microbridges based on Ge-on-Si (110) and effect of bridge length

Processing of the stacked n-Si channel over p-Si channel for fabrication of CFETs

Revealing very low thermal conductivity of germanium tin epilayers at room-temperature

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Lucas Stehouwer

Orson van der Molen

Nicolas Forrer

Stefano Calcaterra

Ian Colombo

Patrick Daoust

Study and reduction of dislocation densities in Si1-xGex virtual substrates for quantum computing applications

Towards anisotropically strained in-plane Ge nanowires for quantum transport experiments

Germanium/Silicon Core Shell Nanowires for Spin/Hole Qubits Fabricated by Chemical Vapour Deposition

Germanium Quantum Wells for Spin Qubit Application

Optical study of isotopically pure 70Ge-on-Si films

CVD-grown Nuclear Spin-depleted 70Ge/SiGe Heterostructures