The Joint ISTDM-ICSI conference will cover topical issues in the area of group IV materials and technology research:

  • Group IV semiconductors: Si, Ge, C, Sn, Pb and their alloys
  • Monolithic and hybrid integration of III-V semiconductors on Si: GaN, InSb, GaAs, GaAs, InGaAs
  • 2D materials: graphene, 2D transition metal dichalcogenides, germanene, silicene, stanine, black phosphorous
  • Semiconductor-superconductor integration
  • Isotopically purified materials and heterostructures
  • Strain-tuning platforms: relaxed buffers, silicon nitride, suspended microstructures
  • Advanced thermal processing: ultra-high doping/activation; spike & soak, ms-anneal (flash, laser), ns-anneal (melt, sub-melt), microwave-anneal
  • Interfaces: high-K, metal contacts, electrical properties and characterization, surface passivation, high quality oxides, e.g. ISSG (in-situ steam generation) and RPO (remote plasma oxidation)
  • Epitaxy equipment technology & metrology challenges
  • Micro- nano-electronics: hybrid FinFETs
  • Infrared photodetectors including avalanche photodiodes and single photon detectors
  • Mid-infrared photonics: quantum cascade lasers, waveguides, and quantum well photodetectors
  • Group IV and hybrid laser sources
  • Quantum technologies: 2D electron and hole gas quantum dots, single donor quantum dots, superconducting quantum dots, nuclear spin qubits
  • Emerging technologies: neuromorphic devices, plasmonics and spin manipulation
  • Semiconductor-based thermoelectrics