Confirmed invited speakers

Donguk Nam

Nanyang Technological University Singapore

Strain-engineered GeSn light sources for photonic-integrated circuits 

Delphine Marris-Morini

Université Paris-Sud C2N
France

Silicon germanium integrated modulator and photodetector in the mid-IR wavelength range 

Andrea Hofmann

University of Basel
Switzerland

Quantum devices in germanium

Peter Sutter

University of Nebraska-Lincoln
USA

1D Van der Waals nanostructures: Harnessing defects for
new functionality 

Simone Assali

Polytechnique Montréal
Canada

Strain engineering of
hole states in Ge QWs

Dan Buca

Forschungszentrum Jülich
Germany

Thermoelectric properties of GeSn alloys

Mark Friesen

University of Wisconsin Madison
USA

.

Stefan Birner

Nextnano GmbH
Germany

.

Erik Bakkers

Eindhoven University of Technology – Netherlands

Epitaxy of hexagonal SiGe

Douglas J. Paul

University of Glasgow
UK

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Davide Degli Esposti

QuTech and TU Delft
Netherlands

Reducing charge noise in quantum dots by using thin silicon quantum wells

Moustafa El Kurdi

C2N CNRS – Université Paris-Saclay
France

Combining GeSn photonic layers with SiN stressor for advanced infrared laser designs and performances

Yves Mols

IMEC
Belgium

Nano-ridge engineering, a versatile approach for integration of III-V devices on 300 mm silicon

Lars Zimmermann

IHP
Germany

Ultra-fast (>250 GHz) integrated Ge photodetector

Anna Marzegalli

Università Milano Bicocca
Italy

Atomistic modeling of extended defects in 3C-SiC/Si and Ge/Si heterostructures