Confirmed invited speakers
Donguk Nam
Nanyang Technological University Singapore
Strain-engineered GeSn light sources for photonic-integrated circuits
Delphine Marris-Morini
Université Paris-Sud C2N
France
Silicon germanium integrated modulator and photodetector in the mid-IR wavelength range
Andrea Hofmann
University of Basel
Switzerland
Quantum devices in germanium
Peter Sutter
University of Nebraska-Lincoln
USA
1D Van der Waals nanostructures: Harnessing defects for
new functionality
Simone Assali
Polytechnique Montréal
Canada
Strain engineering of
hole states in Ge QWs
Dan Buca
Forschungszentrum Jülich
Germany
Thermoelectric properties of GeSn alloys
Mark Friesen
University of Wisconsin Madison
USA
How Ge affects the valley splitting in Si quantum wells
Stefan Birner
Nextnano GmbH
Germany
Software for the simulation of SiGe devices and recent progress on Flying Electron Qubits
Erik Bakkers
Eindhoven University of Technology – Netherlands
Epitaxy of hexagonal SiGe heterostructures
Douglas J. Paul
University of Glasgow
UK
A Review of Ge-on-Si Single Photon Avalanche Diode (SPAD)
Photodetectors and Applications
Davide Degli Esposti
QuTech and TU Delft
Netherlands
Reducing charge noise in quantum dots by using thin silicon quantum wells
Moustafa El Kurdi
C2N CNRS – Université Paris-Saclay
France
Combining GeSn photonic layers with SiN stressor for advanced infrared laser designs and performances
Yves Mols
IMEC
Belgium
Nano-ridge engineering, a versatile approach for integration of III-V devices on 300 mm silicon
Lars Zimmermann
IHP
Germany
Ultra-fast (>250 GHz) integrated Ge photodetector
Anna Marzegalli
Università Milano Bicocca
Italy
Atomistic modeling of extended defects in 3C-SiC/Si and Ge/Si heterostructures
Carlo Zucchetti
Politecnico di Milano
Italy
Spin injection, transport, and detection in Ge-based structures