Sunday, 21st May
17:00 – 21:00
Welcome drinks
Monday, 22nd May
Lasing in Group IV Materials
08:30 – 08:40
Opening remarks
08:40 – 09:05
Strain-engineered GeSn light sources for photonic-integrated circuits
Invited Talk
Donguk Nam
Nanyang Technological University, Singapore
09:05 – 09:30
Combining GeSn photonic layers with SiN stressor for advanced infrared laser designs and performances
Invited Talk
Moustafa El Kurdi
Université Paris-Saclay CNRS, France
09:30 – 09:45
GeSn/SiGeSn micro-rings laser diodes on Si
Teren Liu
Forschungszentrum Jülich, Germany
09:45 – 10:00
Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs
Vincent Reboud
CEA-LETI, France
10:00 – 10:15
First indications for lasing in hexagonal Silicon-Germanium Nanowires
Jos Haverkort
Eindhoven University of Technology, Netherlands
10:15 – 10:35
Break
Epitaxy I
10:35 – 11:00
Epitaxy of hexagonal SiGe
Invited Talk
Erik Bakkers
Eindhoven University of Technology, Netherlands
11:00 – 11:15
Isothermal heteroepitaxy of Ge₁₋ₓ Snₓ structures for electronic and photonic applications
Omar Concepción
Forschungszentrum Jülich, Germany
11:15 – 11:30
In-situ Annealing for High Crystal Quality GeSn Growth by Solid-Source Molecular Beam Epitaxy
Hui Jia
University College London, UK
11:30 – 11:45
Epitaxy of Hexagonal SiGe heterostructures: Towards Hexagonal SiGe Quantum Wells
Wouter Peeters
Eindhoven University of Technology, Netherlands
11:45 – 12:00
N-type characteristics of undoped Ge₀.₉₆₇Sn₀.₀₃₃ fabricated on bulk n-Ge
Noboru Shimizu
Kyushu University, Japan
12:00 – 12:15
Characterization of highly tensile strained SiP layer grown by epitaxy
Joël Kanyandekwe
Université Grenoble Alpes, France
12:15 – 12:30
Nanosecond radiative lifetime of Hexagonal Ge
Jos Haverkort
Eindhoven University of Technology, Netherlands
12:30 – 14:00
Lunch break
Epitaxy II and Defects
14:00 – 14:25
Atomistic modeling of extended defects in 3C-SiC/Si and Ge/Si heterostructures
Invited Talk
Anna Marzegalli
Università Milano Bicocca, Italy
14:25 – 14:40
Impact of Carbon to Silicon Ratio on the Crystal Quality of Epitaxially Grown 3C-SiC thin film on Si(001) substrate
Freya Watson
University of Warwick, UK
14:40 – 14:55
Mesoporous patterned silicon: a compliant substrate for defect free heteroepitaxy
Alexandre Heintz
Université de Sherbrooke, Canada
14:55 – 15:10
Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-Ray-Photoelectron spectroscopy
Jérémy Vives
STMicroelectronics Univ. Grenoble Alpes, France
15:10 – 15:25
Background carrier concentration in intrinsic Ge-rich SiGe/Ge heterostructures integrated on Si(001)
Henriette Tetzner
IHP, Germany
15:25 – 15:40
Modeling of Silicon Epitaxy on 300 mm Wafers and Analysis of Thickness Uniformity at Different Scales
Andrey Smirnov
Semiconductor Technology Research, Serbia
15:40 – 15:55
Emergence of Hyperuniformity in Self-Assembled SiGe Nanostructures
Marco Salvalaglio
Technische Universität Dresden, Germany
15:55 – 16:10
Flash Annealing to Reduce the Threading Dislocation Density in Ge Films for CMOS-Compatible Monolithic Integration on Si
Thomas Hagger
EPFL, Switzerland
16:10 – 16:30
Break
Quantum Devices and Materials I
16:30 – 16:55
Quantum devices in germanium
Invited Talk
Andrea Hofmann
Universität Basel, Switzerland
16:55 – 17:20
Software for the simulation of SiGe devices and recent progress on Flying Electron Qubits
Invited Talk
Stefan Birner
Nextnano, Germany
17:20 – 17:35
Hole mobility in strained germanium exceeds 4×10⁶ cm²V ⁻¹s⁻¹
Maksym Myronov
University of Warwick, UK
17:35 – 17:50
Growth of ⁸SiGe heterostructures with oscillating Ge concentrations for spin qubits by molecular beam epitaxy
Kevin-Peter Gradwohl
IKZ, Germany
17:50 – 18:05
Conductivity type transition in high-purity germanium bulk materials
R. Radhakrishnan Sumathi
IKZ, Germany
Tuesday, 23rd May
Spintronics
08:30 – 08:55
Spin injection, transport, and detection in Ge-based structures
Invited Talk
Carlo Zucchetti
Politecnico di Milano, Italy
08:55 – 09:10
Molecular beam epitaxy growth of ferromagnetic Heusler alloy films on SiGe(111) grown by Al-Ge-paste-induced liquid phase epitaxy
Michihiro Yamada
Osaka University, Japan
09:10 – 09:25
Electric Field Manipulation of Spin Currents in Silicon Platforms
Francesco Scali
Politecnico di Milano, Italy
09:25 – 09:40
Enhancement in Spin Transport Length in Strained n-Si₀.₁Ge₀.₉(111)
Kohei Hamaya
Osaka University, Japan
09:40 – 09:55
Optical Spin Injection and Coherent Control in GeSn Semiconductors
Gabriel Fettu
École Polytechnique de Montréal, Canada
09:55 – 10:10
Detection of magnetoresistance effect in all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve devices on Si(111)
Atsuya Yamada
Osaka University, Japan
10:10 – 10:25
Towards Si-based Topology by Design: The Emergence of Quantum Phases in GeSn Heterostructures
Fabio Pezzoli
Università Milano Bicocca, Italy
10:25 – 10:40
Break
Thermoelectrics and Energy Harvesting
10:45 – 11:10
Thermoelectric properties of GeSn alloys
Invited Talk
Dan Buca
Forschungszentrum Jülich, Germany
11:10 – 11:25
Temperature dependence of Raman scattering in Ge and GeSn layers
Davide Spirito
IHP, Germany
11:25 – 11:40
Low-temperature Thermoelectric Properties of GeSn Alloys Films
Masashi Kurosawa
Nagoya University, Japan
11:40 – 11:55
Polarized-resolved Raman scattering of epitaxially grown GeSn layers with various Sn content
Agnieszka Anna Corley-Wiciak
IHP, Germany
11:55 – 12:10
Determining the Superiority of Cavity-Free Thermoelectric Generators Composed of GeSn and Si Wires
Md Mehdee Hasan Mahfuz
Waseda University, Japan
12:10 – 12:25
Record-High Electron Mobility in Polycrystalline GeSn Thin Films on Insulators
Koki Nozawa
University of Tsukuba, Japan
12:25 – 12:40
GeSn Mid-Infrared Thermophotovoltaic Cells for Power Beaming and Heat Conversion
Gérard Daligou
École Polytechnique de Montréal, Canada
12:40 – 12:55
Piezo Resistivity of Epitaxial SiGe
Yuji Yamamoto
IHP, Germany
12:55 – 14:00
Lunch break
MIR Photonics and Plasmonics
14:00 – 14:25
Silicon Germanium integrated modulator and photodetector in the mid-IR wavelength range
Invited Talk
Delphine Marris-Morini
Université Paris-Saclay CNRS, France
14:25 – 14:40
Influence of thickness in Ge-based plasmonic antennas for the detection of human serum albumin
Elena Hardt
IHP, Germany
14:40 – 14:55
Ge-on-Si mid-infrared plasmonics
Paolo Biagioni
Politecnico di Milano, Italy
14:55 – 15:10
SiGe parabolic quantum wells for strong light-matter coupling at THz frequencies
Monica De Seta
Università Roma Tre, Italy
15:10 – 15:25
Mid-infrared nonlinear optics with Ge quantum wells
Jacopo Frigerio
Politecnico di Milano, Italy
15:25 – 15:40
Photonic Properties of Self-Assembled Semiconductor Microstructures
Jacopo Pedrini
Università Milano Biccoca, Italy
15:40 – 15:55
Exploitation of the natural instability in SiGe-based thin solid films for sensing and photonic applications
Monica Bollani
CNR-IFN, Italy
15:55 – 16:10
Suitability of highly doped Group IV semiconductor for spectral narrow plasmonic MIR detection devices
Fritz Berkmann
Università La Sapienza, Italy
17:30 – 19:30
Guided tour of the historical center of Como
Wednesday, 24th May
Quantum Devices and Materials II
08:30 – 08:55
How Ge Affects the Valley Splitting in Si Quantum Wells
Invited Talk
Mark Friesen
University of Wisconsin-Madison, USA
08:55 – 09:20
Reducing charge noise in quantum dots by using thin silicon quantum wells
Davide Degli Esposti
QuTech Delft, Netherlands
09:20 – 09:35
Epitaxy of group IV semiconductors for quantum electronics
Jean-Michel Hartmann
CEA-LETI, France
09:35 – 09:50
Growth and characterization of Ge/Si₁₋ₓ Geₓ planar heterostructures for spin qubits applications
Arianna Nigro
Universität Basel, Switzerland
09:50 – 10:05
Optical Fingerprint of Subnanometer Interfacial Broadening in SiGe/Si Superlattices
Anis Attiaoui
École Polytechnique de Montréal, Canada
10:05 – 10:20
X-ray Nanobeam Mapping of Lattice Strain Modulations caused by CMOS-Processed Gate Electrodes for Quantum Technologies
Cedric Corley-Wiciak
IHP, Germany
10:20 – 10:35
Germanium wafers for strained quantum wells with low disorder
Lucas Stehouwer
QuTech Delft, Netherlands
10:35 – 10:55
Break
Multilayer Systems
10:55 – 11:20
Isotope- and strain-engineered germanium quantum wells
Invited Talk
Simone Assali
École Polytechnique de Montréal, Canada
11:20 – 11:35
Heterogeneous-integrated CFETs Realized by Layer Transfer Technology
Wen Hsin Chang
AIST, Japan
11:35 – 11:50
Electron Tomography Analysis of Ge/SiGe Asymmetrically Coupled Quantum Wells
Ekaterina Paysen
Paul Drude Institut, Germany
11:50 – 12:05
Epitaxial SiGe/Si Multi-Layers for CFET Devices, Grown with a High Throughput Process
Roger Loo
IMEC, Belgium
12:05 – 12:20
Electron Emission Properties of Multiple-Stacked SiGe-Nanodots/Si Structures
Katsunori Makihara
Nagoya University, Japan
12:20 – 12:35
Multi-micrometer thick Ge/Si-Ge heterostructures for integrated THz photonic devices
Enrico Talamas Simola
Università Roma Tre, Italy
12:35 – 12:50
Advanced (opto-)electronic Si devices based on supersaturated epitaxial (Si)Ge layers with high Ge content
Moritz Brehm
Johannes Kepler University, Austria
12:50 – 14:00
Lunch break
2D, 1D, and 0D Epitaxy
14:00 – 14:25
1D Van der Waals Nanostructures: Harnessing Defects for New Functionality
Invited Talk
Peter Sutter
University of Nebraska-Lincoln, USA
14:25 – 14:40
Van der Waals Epitaxy of Quasi Two-Dimensional GeTe-Rich (GeTe)m(Sb₂Te₃)n Layered Alloys on Silicon
Stefano Cecchi
Università Milano Bicocca, Italy
14:40 – 14:55
Electronic and morphological properties of the graphene/Ge(110) interface as a function of temperature
Luciana Di Gaspare
Università Roma Tre, Italy
14:55 – 15:10
Applications of Graphene-Semiconductor Schottky Junctions to Reconfigurable Field-Effect Transistors
Luca Anzi
Politecnico di Milano, Italy
15:10 – 15:25
Growth of Nd₂O₃ layers on germanium-rich, (111)-oriented SiGe layers
Hannah Genath
Leibniz Universität Hannover, Germany
15:25 – 15:40
Direct Exchange Interactions in Epitaxially Self-Assembled Heterostructures of Ternary Silicides on Si
Ilan Goldfarb
Tel Aviv University, Israel
15:40 – 16:00
Break
Optoelectronic Devices I
16:00 – 16:25
Ultra-fast (>250 GHz) integrated Ge photodetector
Invited Talk
Lars Zimmermann
IHP, Germany
16:25 – 16:40
Bandgap Determination of Lattice Matched SiGeSn on Ge with pin Diodes
Daniel Schwarz
IHT University of Stuttgart, Germany
16:40 – 16:55
Monolithically integrated GaAs/Ge/Si visible-infrared photodetector
Sergio Bietti
Università Milano Bicocca, Italy
16:55 – 17:10
Tellurium-hyperdoped Si for infrared optoelectronics
Shengqiang Zhou
Helmholtz-Zentrum Dresden-Rossendorf, Germany
17:10 – 17:25
Integrated Ge LED for cryogenic quantum applications
Michael Hack
IHT University of Stuttgart, Germany
17:25 – 17:40
Control of Schottky Barrier Height at Metal/Polycrystalline Ge Interfaces with Fermi-Level Pinning Alleviation
Kenta Moto
Kyushu University, Japan
Thursday, 25th May
Substrate Engineering
08:30 – 08:55
Nano-Ridge Engineering – a Versatile Approach for Integration of III-V Devices on 300 mm Silicon
Invited Talk
Yves Mols
IMEC, Belgium
08:55 – 09:10
Overview of Engineered Germanium Substrate Development for Opto-Electronic devices
Jinyoun Cho
Umicore, Belgium
09:10 – 09:25
Ge-on-Nothing as an alternative template to thin Ge wafers
Roger Loo
IMEC, Belgium
09:25 – 09:40
Evaluation of the physical properties of Ge-on-insulator based on Ge-on-Nothing and layer transfer
Keisuke Yamamoto
Kyushu University, Japan
09:40 – 09:55
Unravelling the growth stages on porous substrate and formation of thin detachable Ge membranes
Tadeáš Hanuš
Université de Sherbrooke, Canada
09:55 – 10:10
Low-Temperature Germanium Condensation process on SOI for sensing applications
Luc Favre
IM2NP Aix-Marseille Univ. CNRS, France
10:10 – 10:25
Epitaxial growth of detachable Ge and GaAs/Ge membranes on mesoporous Ge substrate with the PEELER process
Nicolas Paupy
Université de Sherbrooke, Canada
10:25 – 10:40
Break
Optoelectronic Devices II
10:45 – 11:10
A Review of Ge-on-Si Single Photon Avalanche Diode (SPAD) Photodetectors and Applications
Invited Talk
Douglas Paul
University of Glasgow, UK
11:10 – 11:25
Strip-Width-Dependent Spectral Responsivity in a Waveguide Photodetector of Ge by Selective-Area Chemical Vapor Deposition on Si
Yasuhiko Ishikawa
Toyohashi University of Technology, Japan
11:25 – 11:40
Understanding the Pseudo Planar Geometry Scaling in Ge-on-Si Single Photon Avalanche Diodes
Derek Dumas
University of Glasgow, UK
11:40 – 11:55
Electrically tunable Ge-on-Si photodetector
Andrea Ballabio
Eye4NIR, Italy
11:55 – 12:10
Photodetectors based on 3D self-assembled Ge and Si microcrystals
Virginia Falcone
Politecnico di Milano, Italy
12:10 – 12:25
Position controlled integration of InP nanoislands with CMOS compatible Si using nanoheteroepitaxy approach
Anagha Kamath
Humboldt Universität, Germany
12:25 – 12:40
Planar PIN Si:Te photodiode for room-temperature infrared detection
Mohd Saif Shaikh
Helmholtz-Zentrum Dresden-Rossendorf, Germany
12:40 – 13:00
Closing remarks