Program

17:00 – 21:00

Welcome drinks

08:30 – 08:40

Opening remarks

08:40 – 09:05

Strain-engineered GeSn light sources for photonic-integrated circuits
Invited Talk

Donguk Nam
Nanyang Technological University, Singapore

09:05 – 09:30

Combining GeSn photonic layers with SiN stressor for advanced infrared laser designs and performances
Invited Talk

Moustafa El Kurdi
Université Paris-Saclay CNRS, France

09:30 – 09:45

GeSn/SiGeSn micro-rings laser diodes on Si

Teren Liu
Forschungszentrum Jülich, Germany

09:45 – 10:00

Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs

Vincent Reboud
CEA-LETI, France

10:00 – 10:15

First indications for lasing in hexagonal Silicon-Germanium Nanowires

Jos Haverkort
Eindhoven University of Technology, Netherlands

10:15 – 10:35

Break

10:35 – 11:00 

Epitaxy of hexagonal SiGe
Invited Talk

Erik Bakkers
Eindhoven University of Technology, Netherlands

11:00 – 11:15

Isothermal heteroepitaxy of Ge₁₋ₓ Snₓ structures for electronic and photonic applications

Omar Concepción
Forschungszentrum Jülich, Germany

11:15 – 11:30

Molecular beam epitaxy of GeSn on c-plane sapphire

Krista R. Khiangte
Indian Institute of Technology Bombay, India

11:30 – 11:45

In-situ Annealing for High Crystal Quality GeSn Growth by Solid-Source Molecular Beam Epitaxy

Hui Jia
University College London, UK

11:45 – 12:00

Epitaxy of Hexagonal SiGe heterostructures: Towards Hexagonal SiGe Quantum Wells

Wouter Peeters
Eindhoven University of Technology, Netherlands

12:00 – 12:15

N-type characteristics of undoped Ge₀.₉₆₇Sn₀.₀₃₃ fabricated on bulk n-Ge

Noboru Shimizu
Kyushu University, Japan

12:15 – 12:30

Characterization of highly tensile strained SiP layer grown by epitaxy

Joël Kanyandekwe
Université Grenoble Alpes, France

12:30 – 12:45

Nanosecond radiative lifetime of Hexagonal Ge

Jos Haverkort
Eindhoven University of Technology, Netherlands

12:45 – 14:00

Lunch break

14:00 – 14:25

Atomistic modeling of extended defects in 3C-SiC/Si and Ge/Si heterostructures
Invited Talk

Anna Marzegalli
Università Milano Bicocca, Italy

14:25 – 14:40

Impact of Carbon to Silicon Ratio on the Crystal Quality of Epitaxially Grown 3C-SiC thin film on Si(001) substrate

Freya Watson
University of Warwick, UK

14:40 – 14:55

Mesoporous patterned silicon: a compliant substrate for defect free heteroepitaxy

Alexandre Heintz
Université de Sherbrooke, Canada

14:55 – 15:10

Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-Ray-Photoelectron spectroscopy

Jérémy Vives
STMicroelectronics Univ. Grenoble Alpes, France

15:10 – 15:25

Background carrier concentration in intrinsic Ge-rich SiGe/Ge heterostructures integrated on Si(001)

Henriette Tetzner
IHP, Germany

15:25 – 15:40

Modeling of Silicon Epitaxy on 300 mm Wafers and Analysis of Thickness Uniformity at Different Scales

Andrey Smirnov
Semiconductor Technology Research, Serbia

15:40 – 15:55

Emergence of Hyperuniformity in Self-Assembled SiGe Nanostructures

Marco Salvalaglio
Technische Universität Dresden, Germany

15:55 – 16:10

Flash Annealing to Reduce the Threading Dislocation Density in Ge Films for CMOS-Compatible Monolithic Integration on Si

Anna Fontcuberta I Morral
EPFL, Switzerland

16:10 – 16:30

Break

16:30 – 16:55

Quantum devices in germanium
Invited Talk

Andrea Hofmann
Universität Basel, Switzerland

16:55 – 17:20

Software for the simulation of SiGe devices and recent progress on Flying Electron Qubits
Invited Talk

Stefan Birner
Nextnano, Germany

17:20 – 17:35

Hole mobility in strained germanium exceeds 4×10⁶ cm²V ⁻¹s⁻¹

Maksym Myronov
University of Warwick, UK

17:35 – 17:50

Growth of ⁲⁸SiGe heterostructures with oscillating Ge concentrations for spin qubits by molecular beam epitaxy

Kevin-Peter Gradwohl
IKZ, Germany

17:50 – 18:05

Conductivity type transition in high-purity germanium bulk materials

R. Radhakrishnan Sumathi
IKZ, Germany

18:05 – 20:00

Poster session and GOLD sponsor presentation

08:30 – 08:55

Spin injection, transport, and detection in Ge-based structures
Invited Talk

Carlo Zucchetti
Politecnico di Milano, Italy

08:55 – 09:10

Molecular beam epitaxy growth of ferromagnetic Heusler alloy films on SiGe(111) grown by Al-Ge-paste-induced liquid phase epitaxy

Michihiro Yamada
Osaka University, Japan

09:10 – 09:25

Electric Field Manipulation of Spin Currents in Silicon Platforms

Francesco Scali
Politecnico di Milano, Italy

09:25 – 09:40

Enhancement in Spin Transport Length in Strained n-Si₀.₁Ge₀.₉(111)

Kohei Hamaya
Osaka University, Japan

09:40 – 09:55

Optical Spin Injection and Coherent Control in GeSn Semiconductors

Gabriel Fettu
École Polytechnique de Montréal, Canada

09:55 – 10:10

Detection of magnetoresistance effect in all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve devices on Si(111)

Atsuya Yamada
Osaka University, Japan

10:10 – 10:25

Towards Si-based Topology by Design: The Emergence of Quantum Phases in GeSn Heterostructures

Fabio Pezzoli
Università Milano Bicocca, Italy

10:25 – 10:40

Break

10:45 – 11:10

Thermoelectric properties of GeSn alloys
Invited Talk

Dan Buca
Forschungszentrum Jülich, Germany

11:10 – 11:25

Temperature dependence of Raman scattering in Ge and GeSn layers

Davide Spirito
IHP, Germany

11:25 – 11:40

Low-temperature Thermoelectric Properties of GeSn Alloys Films

Masashi Kurosawa
Nagoya University, Japan

11:40 – 11:55

Polarized-resolved Raman scattering of epitaxially grown GeSn layers with various Sn content

Agnieszka Anna Corley-Wiciak
IHP, Germany

11:55 – 12:10

Determining the Superiority of Cavity-Free Thermoelectric Generators Composed of GeSn and Si Wires

Md Mehdee Hasan Mahfuz
Waseda University, Japan

12:10 – 12:25

Record-High Electron Mobility in Polycrystalline GeSn Thin Films on Insulators

Koki Nozawa
University of Tsukuba, Japan

12:25 – 12:40

GeSn Mid-Infrared Thermophotovoltaic Cells for Power Beaming and Heat Conversion

Gérard Daligou
École Polytechnique de Montréal, Canada

12:40 – 12:55

Piezo Resistivity of Epitaxial SiGe

Yuji Yamamoto
IHP, Germany

12:55 – 14:00

Lunch break

14:00 – 14:25

Silicon Germanium integrated modulator and photodetector in the mid-IR wavelength range
Invited Talk

Delphine Marris-Morini
Université Paris-Saclay CNRS, France

14:25 – 14:40

Influence of thickness in Ge-based plasmonic antennas for the detection of human serum albumin

Elena Hardt
IHP, Germany

14:40 – 14:55

Ge-on-Si mid-infrared plasmonics

Paolo Biagioni
Politecnico di Milano, Italy

14:55 – 15:10

SiGe parabolic quantum wells for strong light-matter coupling at THz frequencies

Monica De Seta
Università Roma Tre, Italy

15:10 – 15:25

Mid-infrared nonlinear optics with Ge quantum wells

Jacopo Frigerio
Politecnico di Milano, Italy

15:25 – 15:40

Photonic Properties of Self-Assembled Semiconductor Microstructures

Jacopo Pedrini
Uinversità Milano Biccoca, Italy

15:40 – 15:55

Exploitation of the natural instability in SiGe-based thin solid films for sensing and photonic applications

Monica Bollani
CNR-INFN, Italy

15:55 – 16:10

Suitability of highly doped Group IV semiconductor for spectral narrow plasmonic MIR detection devices

Fritz Berkmann
Università La Sapienza, Italy

17:00 – 22:00

Social dinner

08:30 – 08:55

How Ge Affects the Valley Splitting in Si Quantum Wells
Invited Talk

Mark Friesen
University of Wisconsin-Madison, USA

08:55 – 09:20

Reducing charge noise in quantum dots by using thin silicon quantum wells

Davide Degli Esposti
QuTech Delft, Netherlands

09:20 – 09:35

Epitaxy of group IV semiconductors for quantum electronics

Jean-Michel Hartmann
CEA-LETI, France

09:35 – 09:50

Growth and characterization of Ge/Si₁₋ₓ Geₓ planar heterostructures for spin qubits applications

Arianna Nigro
Universität Basel, Switzerland

09:50 – 10:05

Optical Fingerprint of Subnanometer Interfacial Broadening in SiGe/Si Superlattices

Anis Attiaoui
École Polytechnique de Montréal, Canada

10:05 – 10:20

X-ray Nanobeam Mapping of Lattice Strain Modulations caused by CMOS-Processed Gate Electrodes for Quantum Technologies

Cedric Corley-Wiciak
IHP, Germany

10:20 – 10:40

Break

10:40 – 11:05

Isotope- and strain-engineered germanium quantum wells
Invited Talk

Simone Assali
École Polytechnique de Montréal, Canada

11:05 – 11:20

Heterogeneous-integrated CFETs Realized by Layer Transfer Technology

Wen Hsin Chang
AIST, Japan

11:20 – 11:35

Electron Tomography Analysis of Ge/SiGe Asymmetrically Coupled Quantum Wells

Ekaterina Paysen
Paul Drude Institut, Germany

11:35 – 11:50

Epitaxial SiGe/Si Multi-Layers for CFET Devices, Grown with a High Throughput Process

Roger Loo
IMEC, Belgium

11:50 – 12:05

Electron Emission Properties of Multiple-Stacked SiGe-Nanodots/Si Structures

Katsunori Makihara
Nagoya University, Japan

12:05 – 12:20

Multi-micrometer thick Ge/Si-Ge heterostructures for integrated THz photonic devices

Enrico Talamas Simola
Università Roma Tre, Italy

12:20 – 12:35

Advanced (opto-)electronic Si devices based on supersaturated epitaxial (Si)Ge layers with high Ge content

Moritz Brehm
Johannes Kepler University, Austria

12:35 – 14:00

Lunch break

14:00 – 14:25

1D Van der Waals Nanostructures: Harnessing Defects for New Functionality
Invited Talk

Peter Sutter
University of Nebraska-Lincoln, USA

14:25 – 14:40

Van der Waals Epitaxy of Quasi Two-Dimensional GeTe-Rich (GeTe)m(Sb₂Te₃)n Layered Alloys on Silicon

Stefano Cecchi
Università Milano Bicocca, Italy

14:40 – 14:55

Electronic and morphological properties of the graphene/Ge(110) interface as a function of temperature

Luciana Di Gaspare
Università Roma Tre, Italy

14:55 – 15:10

Applications of Graphene-Semiconductor Schottky Junctions to Reconfigurable Field-Effect Transistors

Luca Anzi
Politecnico di Milano, Italy

15:10 – 15:25

Growth of Nd₂O₃ layers on germanium-rich, (111)-oriented SiGe layers

Hannah Genath
Leibniz Universität Hannover, Germany

15:25 – 15:40

Direct Exchange Interactions in Epitaxially Self-Assembled Heterostructures of Ternary Silicides on Si

Ilan Goldfarb
Tel Aviv University, Israel

15:40 – 16:00

Break

16:00 – 16:25

Ultra-fast (>250 GHz) integrated Ge photodetector
Invited Talk

Lars Zimmermann
IHP, Germany

16:25 – 16:40

Bandgap Determination of Lattice Matched SiGeSn on Ge with pin Diodes

Daniel Schwarz
IHT University of Stuttgart, Germany

16:40 – 16:55

Monolithically integrated GaAs/Ge/Si visible-infrared photodetector

Sergio Bietti
Università Milano Bicocca, Italy

16:55 – 17:10

Tellurium-hyperdoped Si for infrared optoelectronics

Shengqiang Zhou
Helmholtz-Zentrum Dresden-Rossendorf, Germany

17:10 – 17:25

Integrated Ge LED for cryogenic quantum applications

Michael Hack
IHT University of Stuttgart, Germany

17:25 – 17:40

Control of Schottky Barrier Height at Metal/Polycrystalline Ge Interfaces with Fermi-Level Pinning Alleviation

Kenta Moto
Kyushu University, Japan

17:40 – 17:55

InGaN Growth by PAMBE in the Intermediate Composition Regime on Silicon

Federico Cesura
Università Milano Bicocca, Italy

08:30 – 08:55

Nano-Ridge Engineering – a Versatile Approach for Integration of III-V Devices on 300 mm Silicon
Invited Talk

Yves Mols
IMEC, Belgium

08:55 – 09:10

Overview of Engineered Germanium Substrate Development for Opto-Electronic devices

Jinyoun Cho
Umicore, Belgium

09:10 – 09:25

Ge-on-Nothing as an alternative template to thin Ge wafers

Roger Loo
IMEC, Belgium

09:25 – 09:40

Evaluation of the physical properties of Ge-on-insulator based on Ge-on-Nothing and layer transfer

Keisuke Yamamoto
Kyushu University, Japan

09:40 – 09:55

Unravelling the growth stages on porous substrate and formation of thin detachable Ge membranes

Tadeáš Hanuš
Université de Sherbrooke, Canada

09:55 – 10:10

Low-Temperature Germanium Condensation process on SOI for sensing applications

Luc Favre
IM2NP Aix-Marseille Univ. CNRS, France

10:10 – 10:25

Epitaxial growth of detachable Ge and GaAs/Ge membranes on mesoporous Ge substrate with the PEELER process

Nicolas Paupy
Université de Sherbrooke, Canada

10:25 – 10:40

Break

10:45 – 11:10

A Review of Ge-on-Si Single Photon Avalanche Diode (SPAD) Photodetectors and Applications
Invited Talk

Douglas Paul
University of Glasgow, UK

11:10 – 11:25

Strip-Width-Dependent Spectral Responsivity in a Waveguide Photodetector of Ge by Selective-Area Chemical Vapor Deposition on Si

Yasuhiko Ishikawa
Toyohashi University of Technology, Japan

11:25 – 11:40

Understanding the Pseudo Planar Geometry Scaling in Ge-on-Si Single Photon Avalanche Diodes

Ross Millar
University of Glasgow, UK

11:40 – 11:55

Electrically tunable Ge-on-Si photodetector

Andrea Ballabio
Eye4NIR, Italy

11:55 – 12:10

Photodetectors based on 3D self-assembled Ge and Si microcrystals

Virginia Falcone
Politecnico di Milano, Italy

12:10 – 12:25

Position controlled integration of InP nanoislands with CMOS compatible Si using nanoheteroepitaxy approach

Anagha Kamath
Humboldt Universität, Germany

12:25 – 12:40

Planar PIN Si:Te photodiode for room-temperature infrared detection

Mohd Saif Shaikh
Helmholtz-Zentrum Dresden-Rossendorf, Germany

12:40 – 13:00

Closing remarks