{"id":1150,"date":"2023-03-16T10:48:20","date_gmt":"2023-03-16T10:48:20","guid":{"rendered":"https:\/\/www.istdm-icsi-2023.polimi.it\/?page_id=1150"},"modified":"2023-05-23T20:15:25","modified_gmt":"2023-05-23T20:15:25","slug":"program","status":"publish","type":"page","link":"https:\/\/www.istdm-icsi-2023.polimi.it\/?page_id=1150","title":{"rendered":"Program"},"content":{"rendered":"
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Sunday, 21st May<\/h3>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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17:00 – 21:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Welcome drinks<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Monday, 22nd May<\/h3>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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Lasing in Group IV Materials<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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08:30 – 08:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Opening remarks<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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08:40 – 09:05<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Strain-engineered GeSn light sources for photonic-integrated circuits\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Donguk Nam<\/strong>\n
Nanyang Technological University, Singapore\n
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09:05 – 09:30<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Combining GeSn photonic layers with SiN stressor for advanced infrared laser designs and performances\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Moustafa El Kurdi<\/strong>\n
Universit\u00e9 Paris-Saclay CNRS, France\n
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09:30 – 09:45<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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GeSn\/SiGeSn micro-rings laser diodes on Si <\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Teren Liu<\/strong>\n
Forschungszentrum J\u00fclich, Germany\n
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09:45 – 10:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs <\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Vincent Reboud<\/strong>\n
CEA-LETI, France\n
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10:00 – 10:15<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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First indications for lasing in hexagonal Silicon-Germanium Nanowires<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Jos Haverkort<\/strong>\n
Eindhoven University of Technology, Netherlands<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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10:15 – 10:35<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Break<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Epitaxy I<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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10:35 – 11:00 <\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Epitaxy of hexagonal SiGe\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Erik Bakkers<\/strong>
Eindhoven University of Technology, Netherlands<\/span>\n
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11:00 – 11:15<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Isothermal heteroepitaxy of Ge<\/span>\u2081\u208b\u2093<\/span>\n Sn<\/span>\u2093<\/span> structures for electronic and photonic applications<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Omar Concepci\u00f3n<\/strong>\n
Forschungszentrum J\u00fclich, Germany<\/span>\n
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11:15 – 11:30<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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In-situ Annealing for High Crystal Quality GeSn Growth by Solid-Source Molecular Beam Epitaxy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Hui Jia<\/strong>\n
University College London, UK\n
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11:30 – 11:45<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Epitaxy of Hexagonal SiGe heterostructures: Towards Hexagonal SiGe Quantum Wells<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Wouter Peeters<\/strong>\n
Eindhoven University of Technology, Netherlands<\/span>\n
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11:45 – 12:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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N-type characteristics of undoped Ge\u2080.\u2089\u2086\u2087Sn\u2080.\u2080\u2083\u2083 fabricated on bulk n-Ge<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Noboru Shimizu<\/strong>\n
Kyushu University, Japan<\/span>\n
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12:00 – 12:15<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Characterization of highly tensile strained SiP layer grown by epitaxy<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Jo\u00ebl Kanyandekwe<\/strong>\n
Universit\u00e9 Grenoble Alpes, France\n
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12:15 – 12:30<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Nanosecond radiative lifetime of Hexagonal Ge<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Jos Haverkort<\/strong>\n
Eindhoven University of Technology, Netherlands<\/span>\n
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12:30 – 14:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Lunch break<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Epitaxy II and Defects<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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14:00 – 14:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Atomistic modeling of extended defects in 3C-SiC\/Si and Ge\/Si heterostructures\n
Invited Talk<\/strong>\n
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Anna Marzegalli<\/strong>\n
Universit\u00e0 Milano Bicocca, Italy\n
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14:25 – 14:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Impact of Carbon to Silicon Ratio on the Crystal Quality of Epitaxially Grown 3C-SiC thin film on Si(001) substrate<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Freya Watson<\/strong>\n
University of Warwick, UK\n
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14:40 – 14:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Mesoporous patterned silicon: a compliant substrate for defect free heteroepitaxy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Alexandre Heintz<\/strong>\n
Universit\u00e9 de Sherbrooke, Canada\n
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14:55 – 15:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-Ray-Photoelectron spectroscopy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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J\u00e9r\u00e9my Vives<\/strong>\n
STMicroelectronics Univ. Grenoble Alpes, France\n
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15:10 – 15:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Background carrier concentration in intrinsic Ge-rich SiGe\/Ge heterostructures integrated on Si(001)<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Henriette Tetzner<\/strong>\n
IHP, Germany\n
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15:25 – 15:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Modeling of Silicon Epitaxy on 300 mm Wafers and Analysis of Thickness Uniformity at Different Scales<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Andrey Smirnov<\/strong>\n
Semiconductor Technology Research, Serbia\n
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15:40 – 15:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Emergence of Hyperuniformity in Self-Assembled SiGe Nanostructures<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Marco Salvalaglio<\/strong>\n
Technische Universit\u00e4t Dresden, Germany\n
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15:55 – 16:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Flash Annealing to Reduce the Threading Dislocation Density in Ge Films for CMOS-Compatible Monolithic Integration on Si<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Thomas Hagger<\/strong>\n
EPFL, Switzerland\n
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16:10 – 16:30<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Break<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Quantum Devices and Materials I<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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16:30 – 16:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Quantum devices in germanium\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Andrea Hofmann<\/strong>\n
Universit\u00e4t Basel, Switzerland\n
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16:55 – 17:20<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Software for the simulation of SiGe devices and recent progress on Flying Electron Qubits
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Stefan Birner<\/strong>\n
Nextnano, Germany\n
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17:20 – 17:35<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Hole mobility in strained germanium exceeds 4\u00d710\u2076<\/span> cm\u00b2<\/span>V\n \u207b\u00b9<\/span>s\u207b\u00b9<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Maksym Myronov<\/strong>\n
University of Warwick, UK\n
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17:35 – 17:50<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Growth of \u2072\u2078<\/span>SiGe heterostructures with oscillating Ge concentrations for spin qubits by molecular beam epitaxy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Kevin-Peter Gradwohl<\/strong>\n
IKZ, Germany\n
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17:50 – 18:05<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Conductivity type transition in high-purity germanium bulk materials<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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R. Radhakrishnan Sumathi<\/strong>\n
IKZ, Germany\n
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18:05 – 20:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Poster session and GOLD sponsor presentation<\/p>\n <\/div>\n <\/div>\n

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Tuesday, 23rd May<\/h3>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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Spintronics<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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08:30 – 08:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Spin injection, transport, and detection in Ge-based structures
Invited <\/strong>Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Carlo Zucchetti<\/strong>\n
Politecnico di Milano, Italy\n
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08:55 – 09:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Molecular beam epitaxy growth of ferromagnetic Heusler alloy films on SiGe(111) grown by Al-Ge-paste-induced liquid phase epitaxy<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Michihiro Yamada<\/strong>\n
Osaka University, Japan\n
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09:10 – 09:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Electric Field Manipulation of Spin Currents in Silicon Platforms<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Francesco Scali<\/strong>\n
Politecnico di Milano, Italy\n
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09:25 – 09:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Enhancement in Spin Transport Length in Strained n-Si\u2080.\u2081Ge\u2080.\u2089(111)<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Kohei Hamaya<\/strong>\n
Osaka University, Japan\n
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09:40 – 09:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Optical Spin Injection and Coherent Control in GeSn Semiconductors<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Gabriel Fettu<\/strong>\n
\u00c9cole Polytechnique de Montr\u00e9al, Canada\n
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09:55 – 10:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Detection of magnetoresistance effect in all-epitaxial Co\u2082<\/span>MnSi\/Ge\/Co\u2082<\/span>MnSi\n vertical spin-valve devices on Si(111)<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Atsuya Yamada<\/strong>\n
Osaka University, Japan\n
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10:10 – 10:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Towards Si-based Topology by Design: The Emergence of Quantum Phases in GeSn Heterostructures<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Fabio Pezzoli<\/strong>\n
Universit\u00e0 Milano Bicocca, Italy\n
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10:25 – 10:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Break<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Thermoelectrics and Energy Harvesting<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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10:45 – 11:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Thermoelectric properties of GeSn alloys\n
Invited Talk<\/strong>\n
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Dan Buca<\/strong>\n
Forschungszentrum J\u00fclich, Germany\n
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11:10 – 11:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Temperature dependence of Raman scattering in Ge and GeSn layers<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Davide Spirito<\/strong>\n
IHP, Germany\n
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11:25 – 11:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Low-temperature Thermoelectric Properties of GeSn Alloys Films<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Masashi Kurosawa<\/strong>\n
Nagoya University, Japan\n
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11:40 – 11:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Polarized-resolved Raman scattering of epitaxially grown GeSn layers with various Sn content<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Agnieszka Anna Corley-Wiciak<\/strong>\n
IHP, Germany\n
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11:55 – 12:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Determining the Superiority of Cavity-Free Thermoelectric Generators Composed of GeSn and Si Wires<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Md Mehdee Hasan Mahfuz<\/strong>\n
Waseda University, Japan\n
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12:10 – 12:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Record-High Electron Mobility in Polycrystalline GeSn Thin Films on Insulators<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Koki Nozawa<\/strong>\n
University of Tsukuba, Japan\n
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12:25 – 12:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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GeSn Mid-Infrared Thermophotovoltaic Cells for Power Beaming and Heat Conversion<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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G\u00e9rard Daligou<\/strong>\n
\u00c9cole Polytechnique de Montr\u00e9al, Canada\n
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12:40 – 12:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Piezo Resistivity of Epitaxial SiGe<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Yuji Yamamoto<\/strong>\n
IHP, Germany\n
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12:55 – 14:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Lunch break<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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MIR Photonics and Plasmonics<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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14:00 – 14:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Silicon Germanium integrated modulator and photodetector in the mid-IR wavelength range\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Delphine Marris-Morini
<\/strong>Universit\u00e9 Paris-Saclay CNRS, France\t<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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14:25 – 14:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Influence of thickness in Ge-based plasmonic antennas for the detection of human serum albumin<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Elena Hardt<\/strong>\n
IHP, Germany\n
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14:40 – 14:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Ge-on-Si mid-infrared plasmonics<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Paolo Biagioni<\/strong>\n
Politecnico di Milano, Italy\n
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14:55 – 15:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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SiGe parabolic quantum wells for strong light-matter coupling at THz frequencies<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Monica De Seta<\/strong>\n
Universit\u00e0 Roma Tre, Italy\n
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15:10 – 15:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Mid-infrared nonlinear optics with Ge quantum wells<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Jacopo Frigerio<\/strong>\n
Politecnico di Milano, Italy\n
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15:25 – 15:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Photonic Properties of Self-Assembled Semiconductor Microstructures<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Jacopo Pedrini<\/strong>\n
Universit\u00e0 Milano Biccoca, Italy\n
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15:40 – 15:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Exploitation of the natural instability in SiGe-based thin solid films for sensing and photonic applications<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Monica Bollani<\/strong>\n
CNR-IFN, Italy\n
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15:55 – 16:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Suitability of highly doped Group IV semiconductor for spectral narrow plasmonic MIR detection devices<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Fritz Berkmann<\/strong>\n
Universit\u00e0 La Sapienza, Italy\n
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17:30 – 19:30<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Guided tour of the historical center of Como<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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20:00 – 23:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Social dinner at Giulietta al Lago<\/em><\/p>\n <\/div>\n <\/div>\n

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Wednesday, 24th May<\/h3>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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Quantum Devices and Materials II<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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08:30 – 08:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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How Ge Affects the Valley Splitting in Si Quantum Wells\n
Invited Talk<\/strong>\n
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Mark Friesen<\/strong>\n
University of Wisconsin-Madison, USA<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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08:55 – 09:20<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Reducing charge noise in quantum dots by using thin silicon quantum wells<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Davide Degli Esposti<\/strong>\n
QuTech Delft, Netherlands<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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09:20 – 09:35<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Epitaxy of group IV semiconductors for quantum electronics<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Jean-Michel Hartmann<\/strong>\n
CEA-LETI, France<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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09:35 – 09:50<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Growth and characterization of Ge\/Si\u2081\u208b\u2093<\/span> Ge\u2093<\/span> planar heterostructures\n for spin qubits applications<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Arianna Nigro<\/strong>\n
Universit\u00e4t Basel, Switzerland<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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09:50 – 10:05<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Optical Fingerprint of Subnanometer Interfacial Broadening in SiGe\/Si Superlattices<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Anis Attiaoui<\/strong>\n
\u00c9cole Polytechnique de Montr\u00e9al, Canada<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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10:05 – 10:20<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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X-ray Nanobeam Mapping of Lattice Strain Modulations caused by CMOS-Processed Gate Electrodes for Quantum Technologies<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Cedric Corley-Wiciak<\/strong>
IHP, Germany<\/span><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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10:20 – 10:35<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Germanium wafers for strained quantum wells with low disorder<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Lucas Stehouwer<\/strong>\n
QuTech Delft, Netherlands\n
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10:35 – 10:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Break<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Multilayer Systems<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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10:55 – 11:20<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Isotope- and strain-engineered germanium quantum wells\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Simone Assali<\/strong>\n
\u00c9cole Polytechnique de Montr\u00e9al, Canada<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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11:20 – 11:35<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Heterogeneous-integrated CFETs Realized by Layer Transfer Technology\n
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Wen Hsin Chang<\/strong>\n
AIST, Japan<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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11:35 – 11:50<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Electron Tomography Analysis of Ge\/SiGe Asymmetrically Coupled Quantum Wells<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Ekaterina Paysen<\/strong>\n
Paul Drude Institut, Germany<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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11:50 – 12:05<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Epitaxial SiGe\/Si Multi-Layers for CFET Devices, Grown with a High Throughput Process<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Roger Loo<\/strong>\n
IMEC, Belgium<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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12:05 – 12:20<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Electron Emission Properties of Multiple-Stacked SiGe-Nanodots\/Si Structures<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Katsunori Makihara<\/strong>\n
Nagoya University, Japan<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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12:20 – 12:35<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Multi-micrometer thick Ge\/Si-Ge heterostructures for integrated THz photonic devices<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Enrico Talamas Simola<\/strong>\n
Universit\u00e0 Roma Tre, Italy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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12:35 – 12:50<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Advanced (opto-)electronic Si devices based on supersaturated epitaxial (Si)Ge layers with high Ge content<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Moritz Brehm<\/strong>\n
Johannes Kepler University, Austria<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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12:50 – 14:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Lunch break<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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2D, 1D, and 0D Epitaxy<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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14:00 – 14:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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1D Van der Waals Nanostructures: Harnessing Defects for New Functionality\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Peter Sutter<\/strong>\n
University of Nebraska-Lincoln, USA<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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14:25 – 14:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Van der Waals Epitaxy of Quasi Two-Dimensional GeTe-Rich (GeTe)m(Sb\u2082Te\u2083)n Layered Alloys on Silicon<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Stefano Cecchi<\/strong>\n
Universit\u00e0 Milano Bicocca, Italy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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14:40 – 14:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Electronic and morphological properties of the graphene\/Ge(110) interface as a function of temperature<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Luciana Di Gaspare<\/strong>\n
Universit\u00e0 Roma Tre, Italy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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14:55 – 15:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Applications of Graphene-Semiconductor Schottky Junctions to Reconfigurable Field-Effect Transistors<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Luca Anzi<\/strong>\n
Politecnico di Milano, Italy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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15:10 – 15:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Growth of Nd\u2082O\u2083 layers on germanium-rich, (111)-oriented SiGe layers<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Hannah Genath<\/strong>\n
Leibniz Universit\u00e4t Hannover, Germany<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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15:25 – 15:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Direct Exchange Interactions in Epitaxially Self-Assembled Heterostructures of Ternary Silicides on Si<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Ilan Goldfarb<\/strong>\n
Tel Aviv University, Israel<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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15:40 – 16:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Break<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Optoelectronic Devices I<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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16:00 – 16:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Ultra-fast (>250 GHz) integrated Ge photodetector\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Lars Zimmermann<\/strong>\n
IHP, Germany<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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16:25 – 16:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Bandgap Determination of Lattice Matched SiGeSn on Ge with pin Diodes<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Daniel Schwarz<\/strong>\n
IHT University of Stuttgart, Germany<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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16:40 – 16:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Monolithically integrated GaAs\/Ge\/Si visible-infrared photodetector<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Sergio Bietti<\/strong>\n
Universit\u00e0 Milano Bicocca, Italy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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16:55 – 17:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Tellurium-hyperdoped Si for infrared optoelectronics<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Shengqiang Zhou<\/strong>\n
Helmholtz-Zentrum Dresden-Rossendorf, Germany<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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17:10 – 17:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Integrated Ge LED for cryogenic quantum applications<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Michael Hack<\/strong>\n
IHT University of Stuttgart, Germany<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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17:25 – 17:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Control of Schottky Barrier Height at Metal\/Polycrystalline Ge Interfaces with Fermi-Level Pinning Alleviation<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Kenta Moto<\/strong>\n
Kyushu University, Japan<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Thursday, 25th May<\/h3>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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Substrate Engineering<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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08:30 – 08:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Nano-Ridge Engineering – a Versatile Approach for Integration of III-V Devices on 300 mm Silicon\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Yves Mols<\/strong>\n
IMEC, Belgium<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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08:55 – 09:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Overview of Engineered Germanium Substrate Development for Opto-Electronic devices<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Jinyoun Cho<\/strong>\n
Umicore, Belgium<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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09:10 – 09:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Ge-on-Nothing as an alternative template to thin Ge wafers <\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Roger Loo<\/strong>\n
IMEC, Belgium<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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09:25 – 09:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Evaluation of the physical properties of Ge-on-insulator based on Ge-on-Nothing and layer transfer<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Keisuke Yamamoto<\/strong>\n
Kyushu University, Japan<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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09:40 – 09:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Unravelling the growth stages on porous substrate and formation of thin detachable Ge membranes<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Tade\u00e1\u0161 Hanu\u0161<\/strong>\n
Universit\u00e9 de Sherbrooke, Canada<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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09:55 – 10:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Low-Temperature Germanium Condensation process on SOI for sensing applications<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Luc Favre<\/strong>\n
IM2NP Aix-Marseille Univ. CNRS, France<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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10:10 – 10:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Epitaxial growth of detachable Ge and GaAs\/Ge membranes on mesoporous Ge substrate with the PEELER process<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Nicolas Paupy<\/strong>\n
Universit\u00e9 de Sherbrooke, Canada<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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10:25 – 10:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Break<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Optoelectronic Devices II<\/h4>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n
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10:45 – 11:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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A Review of Ge-on-Si Single Photon Avalanche Diode (SPAD) Photodetectors and Applications\n
Invited Talk<\/strong><\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Douglas Paul<\/strong>\n
University of Glasgow, UK<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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11:10 – 11:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Strip-Width-Dependent Spectral Responsivity in a Waveguide Photodetector of Ge by Selective-Area Chemical Vapor Deposition on Si<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Yasuhiko Ishikawa<\/strong>\n
Toyohashi University of Technology, Japan<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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11:25 – 11:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Understanding the Pseudo Planar Geometry Scaling in Ge-on-Si Single Photon Avalanche Diodes<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Derek Dumas<\/strong>\n
University of Glasgow, UK<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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11:40 – 11:55<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Electrically tunable Ge-on-Si photodetector<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Andrea Ballabio<\/strong>\n
Eye4NIR, Italy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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11:55 – 12:10<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Photodetectors based on 3D self-assembled Ge and Si microcrystals<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Virginia Falcone<\/strong>\n
Politecnico di Milano, Italy<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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12:10 – 12:25<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Position controlled integration of InP nanoislands with CMOS compatible Si using nanoheteroepitaxy approach<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Anagha Kamath<\/strong>\n
Humboldt Universit\u00e4t, Germany<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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12:25 – 12:40<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Planar PIN Si:Te photodiode for room-temperature infrared detection<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Mohd Saif Shaikh<\/strong>\n
Helmholtz-Zentrum Dresden-Rossendorf, Germany<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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12:40 – 13:00<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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Closing remarks<\/p>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n

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\n \n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n <\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Sunday, 21st May 17:00 – 21:00 Welcome drinks Monday, 22nd May Lasing in Group IV Materials 08:30 – 08:40 Opening remarks 08:40 – 09:05 Strain-engineered GeSn light sources for photonic-integrated circuits Invited Talk Donguk Nam Nanyang Technological University, Singapore 09:05 – 09:30 Combining GeSn photonic layers with SiN stressor for advanced infrared laser designs and […]<\/p>\n","protected":false},"author":4,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-templates\/full-width-page.php","meta":{"footnotes":""},"class_list":["post-1150","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.istdm-icsi-2023.polimi.it\/index.php?rest_route=\/wp\/v2\/pages\/1150","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.istdm-icsi-2023.polimi.it\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.istdm-icsi-2023.polimi.it\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.istdm-icsi-2023.polimi.it\/index.php?rest_route=\/wp\/v2\/users\/4"}],"replies":[{"embeddable":true,"href":"https:\/\/www.istdm-icsi-2023.polimi.it\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=1150"}],"version-history":[{"count":20,"href":"https:\/\/www.istdm-icsi-2023.polimi.it\/index.php?rest_route=\/wp\/v2\/pages\/1150\/revisions"}],"predecessor-version":[{"id":1999,"href":"https:\/\/www.istdm-icsi-2023.polimi.it\/index.php?rest_route=\/wp\/v2\/pages\/1150\/revisions\/1999"}],"wp:attachment":[{"href":"https:\/\/www.istdm-icsi-2023.polimi.it\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=1150"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}